This is achieved by using the negative differential resistance effect from the threshold switch to induce an internal voltage amplification across the MoS 2 channel.
Here, we present an atomic threshold-switching field-effect transistor constructed by integrating a metal filamentary threshold switch with a two-dimensional MoS 2 channel, and obtain abrupt steepness in the turn-on characteristics and 4.5 mV decade −1 subthreshold swing (over five decades). However, field-effect transistors based on two-dimensional materials are still confronted with the fundamental thermionic limitation of the subthreshold swing of 60 mV decade −1 at room temperature. As promising channel materials, two-dimensional semiconductors show excellent capabilities of scaling dimensions and reducing off-state currents. Power dissipation is a fundamental issue for future chip-based electronics.
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